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参数资料
| 型号： | 2SA1452A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 149K |
| 代理商： | 2SA1452A |
2SA1452A
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1452A
High-Speed, High-Current Switching Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 6 A)
High-speed switching: tstg = 1.0 s (typ.)
Complementary to 2SC3710A
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
12
A
Base current
IB
2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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PDF描述 |
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| 2SA1464-R-TP | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1464-P-TP | 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1484-E | SMALL SIGNAL TRANSISTOR |
| 2SA1484-D | SMALL SIGNAL TRANSISTOR |
| 2SA1492Y | 15 A, 180 V, PNP, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1452A-Y(F) | 功能描述:两极晶体管 - BJT PNP 80V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1452A-YF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR 2SA1452A-Y |
| 2SA1452-Y | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1453 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-4E1A -50V -.1A .2W ECB |
| 2SA1459 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SST-15V -.05A .25W ECB |
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