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参数资料
| 型号： | 2SA1452A |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-10R1A, 3 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 149K |
| 代理商： | 2SA1452A |
2SA1452A
2004-07-07
4
Collector current IC (A)
VBE (sat) – IC
Ba
se-
emi
tte
rsa
tu
rati
on
v
o
ltage
V
BE
(s
a
t)
(V
)
Base-emitter voltage VBE (V)
IC – VBE
C
ollect
or
c
urre
nt
I C
(
A
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Co
lle
ct
or
cu
rr
en
t
I
C
(
A
)
Ambient temperature Ta (°C)
PC – Ta
C
ollect
or
di
ssi
pa
tion
P
C
(
W
)
10
0
0.4
0.8
1.2
1.6
2.0
2.4
2
4
6
8
Common emitter
VCE = 1 V
Tc = 100°C
25
55
(1) Tc = Ta
Infinite heat sink
(2) No heat sink
50
0
40
80
120
160
200
240
10
20
30
40
(1)
(2)
Common emitter
IC/IB = 20
Tc = 55°C
25
100
0.1
0.3
1
3
10
0.1
0.3
0.5
1
3
5
20
1
3
10
30
100
0.1
0.3
0.5
1
30
10
5
3
IC max (pulsed)*
10 ms*
1 ms*
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
IC max
(continuous)
DC operation
Tc = 25°C
VCEO
max
Pulse width tw (s)
rth – tw
T
ra
ns
ie
nt
t
he
rm
al
r
esi
stanc
e
r th
(°
C
/W
)
0.001
1000
10
100
0.01
0.1
30
0.3
3
1
100
10
1
0.1
Curves should be applied in thermal limited area.
(single nonrepetitive pulse)
(1) Infinite heat sink
(2) No heat sink
(1)
(2)
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| 2SA1484-E | SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1452A-Y(F) | 功能描述:两极晶体管 - BJT PNP 80V 12A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1452A-YF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR 2SA1452A-Y |
| 2SA1452-Y | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1453 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR 2-4E1A -50V -.1A .2W ECB |
| 2SA1459 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SST-15V -.05A .25W ECB |
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