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参数资料
| 型号： | 2SA1359-Y |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 40 V, PNP, Si, POWER TRANSISTOR |
| 封装： | 2-8H1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 119K |
| 代理商： | 2SA1359-Y |
2SA1359
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1359
Audio Frequency Power Amplifier
Low-Speed Switching
Suitable for the output stage of 5-watt car radios and car stereos.
Good hFE linearity
Complementary to 2SC3422.
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
40
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
3
A
Base current
IB
1
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 40 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
40
―
V
hFE (1)
(Note)
VCE = 2 V, IC = 0.5 A
80
―
240
DC current gain
hFE (2)
VCE = 2 V, IC = 2.5 A
25
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2 A, IB = 0.2 A
―
0.8
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 0.5 A
―
1.0
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
100
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
35
―
pF
Note: hFE (1) classification O: 80 to 160, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1362-GR | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 2SA1429-Y | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1436 | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1359-Y(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-Y(Q) | 功能描述:两极晶体管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1362 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-59-15V -.8A .2WSURFACE MOUNT |
| 2SA1362-GR(T5L,F,T | 功能描述:两极晶体管 - BJT Bipolar Small-Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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