- 您现在的位置：买卖IC网 > PDF目录30480 > 2SA1315-O 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 PDF资料下载
参数资料
| 型号： | 2SA1315-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 179K |
| 代理商： | 2SA1315-O |
2SA1315
2009-12-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1315
Power Amplifier Applications
Power Switching Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching time: tstg = 1.0 μs (typ.)
Complementary to 2SC3328
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
2
A
Base current
IB
1
A
Collector power dissipation
PC
900
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
―
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1316 | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1316-GR | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1316-BL | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-S | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-U | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1315-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1315Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I |
| 2SA1315-Y(F) | 制造商:Toshiba 功能描述:PNP -80V -2A 120 to 240 LSTM Bulk |
| 2SA1315-Y,HOF(M | 功能描述:TRANS PNP 2A 80V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:900mW 频率 - 跃迁:80MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
| 2SA1315-Y,T6ASNF(J | 功能描述:TRANS PNP 2A 80V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:900mW 频率 - 跃迁:80MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
发布紧急采购，3分钟左右您将得到回复。