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参数资料
| 型号： | 2SA1315-O |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封装： | LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 179K |
| 代理商： | 2SA1315-O |
2SA1315
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
1.0
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
1.0
μA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
80
―
V
hFE (1)
(Note2)
VCE = 2 V, IC = 0.5 A
70
―
240
DC current gain
hFE (2)
VCE = 2 V, IB = 1.5 A
40
―
Collector-emitter saturation voltage
VCE (sat)
IC = 1 A, IB = 0.05 A
―
0.2
0.5
V
Base-emitter saturation voltage
VBE (sat)
IC = 1 A, IB = 0.05 A
―
0.9
1.2
V
Transition frequency
fT
VCE = 2 V, IC = 0.5 A
―
80
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
45
―
pF
Turn-on time
ton
―
0.2
―
Storage time
tstg
―
1.0
―
Switching time
Fall time
tf
IB1 = 0.05 A ,IB2 = 0.05 A,
duty cycle ≤ 1%
―
0.2
―
μs
Note2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
Note3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
I B1
20 μs
VCC = 30 V
Output
30
Ω
IB2
IB1
Input
I B2
A1315
Lot No.
Note3
Characteristics
indicator
Part No. (or abbreviation code)
相关PDF资料 |
PDF描述 |
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| 2SA1316 | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1316-GR | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1316-BL | 100 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-S | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SA1317-U | 200 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1315-O(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1315Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (86I |
| 2SA1315-Y(F) | 制造商:Toshiba 功能描述:PNP -80V -2A 120 to 240 LSTM Bulk |
| 2SA1315-Y,HOF(M | 功能描述:TRANS PNP 2A 80V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:900mW 频率 - 跃迁:80MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
| 2SA1315-Y,T6ASNF(J | 功能描述:TRANS PNP 2A 80V TO226-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:80V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 50mA，1A 电流 - 集电极截止（最大值）:1μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:70 @ 500mA，2V 功率 - 最大值:900mW 频率 - 跃迁:80MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-226-3，TO-92-3 长体 供应商器件封装:TO-92MOD 标准包装:1 |
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