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参数资料
| 型号： | 2SA1362-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 800 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封装： | 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 307K |
| 代理商： | 2SA1362-GR |
2SA1362
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 15 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
15
V
hFE (1)
(Note)
VCE = 1 V, IC = 100 mA
120
400
DC current gain
hFE (2)
VCE = 1 V, IC = 800 mA
40
Collector-emitter saturation voltage
VCE (sat)
IC = 400 mA, IB = 8 mA
0.2
V
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
120
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
13
pF
Note: hFE (1) classification Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1362-GR(T5L,F,T | 功能描述:两极晶体管 - BJT Bipolar Small-Signal Transistors RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1362-GR(TE85L,F | 制造商:Toshiba 功能描述:PNP |
| 2SA1362-Y(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1364-T11-1E | 制造商:Mitsubishi Electric 功能描述: |
| 2SA1365 | 制造商:Distributed By MCM 功能描述:SUB ONLY MITS. TRANS. SC-59-25V -.7A .15WSURFACE MOUNT |
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