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参数资料
| 型号： | 2SA1617VIB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPAK-3 |
| 文件页数： | 2/5页 |
| 文件大小： | 24K |
| 代理商： | 2SA1617VIB |
2SA1617
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–50
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
—
V
I
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–50
—
V
I
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
—
V
I
E = –10 A, IC = 0
Collector cutoff current
I
CBO
—
–0.5
AV
CB = –30 V, IE = 0
Emitter cutoff current
I
EBO
—
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
100
—
320
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
–0.2
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
—
–0.8
V
CE = –12 V, IC = –2 mA
Note:
1. The 2SA1617 is grouped by h
FE as follows.
Grade
B
C
Mark
VIB
VIC
h
FE
100 to 200
160 to 320
See charcteristic curves of 2SA1031
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1647-K | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647-K-Z | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1647-L-Z | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-252AA |
| 2SA1647-M | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
| 2SA1647-L | 5000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-251AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1618 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA1618-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA1618-GR(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP SMV |
| 2SA1618-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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