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参数资料
| 型号： | 2SA1714-AZ |
| 元件分类： | 功率晶体管 |
| 英文描述： | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 文件页数： | 1/6页 |
| 文件大小： | 141K |
| 代理商： | 2SA1714-AZ |
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
High DC current amplifiers due to darlington connection
Large current capacitance and low VCE(sat)
TO-126 power transistor with high power dissipation
Complementary transistor with 2SC4342
QUALITY GRADES
Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
–
+3.0
A
Collector current (pulse)
IC(pulse)*
–
+6.0
A
Base current (DC)
IB(DC)
0.3
A
Total power dissipation
PT (Ta = 25
°C)
1.3
W
Total power dissipation
PT (Tc = 25
°C)
12
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
*PW
≤ 10 ms, duty cycle ≤ 50%
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1714-M | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1714 | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1714-M-AZ | 3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SA1720-L | 10 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 2SA1721OTE85L | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1720-AZ-L | 制造商:Renesas Electronics 功能描述:Bulk |
| 2SA1720-K(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1720-L(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1721OTE85LF | 功能描述:TRANS PNP 300V 100MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 2mA，20mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 20mA，10V 功率 - 最大值:150mW 频率 - 跃迁:50MHz 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
| 2SA1721RTE85LF | 功能描述:TRANS PNP 300V 100MA TO236-3 制造商:toshiba semiconductor and storage 系列:- 包装:剪切带（CT） 零件状态:Digi-Key 停止供應 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:100mA 电压 - 集射极击穿（最大值）:300V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:500mV @ 2mA，20mA 电流 - 集电极截止（最大值）:100nA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:30 @ 20mA，10V 功率 - 最大值:150mW 频率 - 跃迁:50MHz 工作温度:150°C（TJ） 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:S-Mini 标准包装:1 |
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