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参数资料
| 型号： | 2SA1771 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 12 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 149K |
| 代理商： | 2SA1771 |
2SA1771
2004-07-26
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1771
High-Current Switching Applications
Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 6 A)
High-speed switching: tstg = 0.6 s (typ.)
High emitter-base breakdown voltage: V (BR) EBO = 14 V (min)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
14
V
Collector current
IC
12
A
Base current
IB
1.2
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 80 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 14 V, IC = 0
―
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 50 mA, IB = 0
80
―
V
hFE (1)
VCE = 1 V, IC = 1 A
100
―
320
DC current gain
hFE (2)
VCE = 1 V, IC = 6 A
40
―
Collector-emitter saturation voltage
VCE (sat)
IC = 6 A, IB = 0.3 A
―
0.2
0.4
Base-emitter saturation voltage
VBE (sat)
IC = 6 A, IB = 0.3 A
―
0.9
1.2
V
Transition frequency
fT
VCE = 5 V, IC = 1 A
―
50
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
300
―
pF
Turn-on time
ton
―
0.2
―
Storage time
tstg
―
0.6
―
Switching time
Fall time
tf
IB1 = IB2 = 0.3 A, duty cycle ≤ 1%
―
0.1
―
s
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
I B1
20 s
VCC ≈ 30 V
Output
5
IB1
IB2
Input
I B2
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