参数资料
型号: 2SA1774EB-S
元件分类: 小信号晶体管
英文描述: 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: EMT3F, 3 PIN
文件页数: 1/3页
文件大小: 154K
代理商: 2SA1774EB-S
1/2
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
General Purpose Transistor (50V, 0.15A)
2SA1774EB
Applications
Dimensions (Unit : mm)
General purpose small signal amplifier.
Features
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
Structure
PNP silicon epitaxial.
planar transistor.
Absolute maximum (Ta=25
°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Parameter
VCBO
VCEO
VEBO
PD
Tj
Tstg
60
V
mA
mW
°C
50
6
150
IC
ICP
200
150
55 to +150
Symbol
Limits
Unit
1
1 Pw=1ms Single pulse
2 Each terminal mounted on a recommended land
2
Electrical characteristics (Ta=25
°C)
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Output capacitance
Parameter
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
50
60
6
82
140
4.0
100
0.5
560
5.0
VIC=
1mA
IC=
50A
IE=
50A
VCB=
60V
VEB=
6V
IC/IB=
50mA/5mA
VCE=
6V, IC=1mA
VCE=
12V, IE=2mA, f=100MHz
VCE=
12V, IE=0A, f=1MHz
V
nA
V
MHz
pF
Typ.
Max.
Unit
Conditions
Transition frequency
(1) Base
(2) Emitter
(3) Collector
Each lead has same dimensions
1.6
0.26
0.5 0.5
1.0
1.6
0.86
0.37
(1)
(2)
(3)
0.45
0.7
0.13
0.45
EMT3F
Abbreviated symbol : F
= Denotes hFE
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