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参数资料
| 型号： | 2SA1774EB-S |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | EMT3F, 3 PIN |
| 文件页数： | 2/3页 |
| 文件大小： | 154K |
| 代理商： | 2SA1774EB-S |
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c
2009 ROHM Co., Ltd. All rights reserved.
2009.03 - Rev.B
Data Sheet
2SA1774EB
hFE rank categories
Rank
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
S
270 to 560
Electrical characterristic curves
Fig.1 Grounded emitter propagation
characteristics
0.2
COLLECTOR
CURRENT
:
Ic
(
mA)
50
20
10
5
2
1
0.5
0.2
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE=
6V
BASE TO EMITTER VOLTAGE : VBE (
V)
Ta=100C
25C
40C
Fig.2 Grounded emitter output
characteristics (I)
0.4
4
8
1.2
0
2
6
10
0.8
1.6
2.0
3.5A
7.0
10.5
14.0
17.5
21.0
24.5
28.0
31.5
IB=0
Ta=25C
35.0
COLLECTOR
CURRENT
:
I
C
(
mA)
COLLECTOR TO MITTER VOLTAGE : VCE (
V)
Fig.3 Grounded emitter output
characteristics (II)
40
80
5
3
4
2
1
20
60
100
0
IB=0
Ta=25C
COLLECTOR
CURRENT
:
I
C
(
mA
)
COLLECTOR TO EMITTER VOLTAGE : VCE (
V)
50A
100
150
200
250
500
450
400
350
300
Fig.4 DC current gain vs.
collector current (I)
500
200
100
50
0.2 0.5 1 2
5 10 20 50 100
DC
CURRENT
GAIN
:
h
FE
Ta=25C
VCE=
5V
3V
1V
COLLECTOR CURRENT : IC (
mA)
Fig.5 DC current gain vs.
collector current (II)
500
200
100
50
0.2 0.5 1 2
5 10 20
50 100
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC (
mA)
VCE=
6V
Ta=100C
40C
25C
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
0.1
0.2 0.5 1 2
5 10 20 50 100
1
0.5
0.2
0.05
Ta=25C
COLLECTOR CURRENT : IC (
mA)
IC/IB=
50
20
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
0.1
0.2 0.5 1 2
5 10 20 50 100
1
0.5
0.2
0.05
COLLECTOR CURRENT : IC (
mA)
lC/lB=10
Ta=100C
25C
40C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(
V)
Fig.8 Gain bandwidth product vs.
emitter current
50
100
0.5
20
50
100
200
500
1000
12
5
10
EMITTER CURRENT : IE (
mA)
TRANSITION
FREQUENCY
:
f
T
(
MHz)
Ta=25C
VCE
=
12V
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
Cob
(
pF)
EMITTER
INPUT
CAPACITANCE
:
Cib
(
pF)
0.5
20
2
5
10
1
2
5
10
20
Cib
Cob
Ta=25C
f=1MHz
IE=
0A
IC=
0A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1774EBTLP | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel |
| 2SA1774EBTLQ | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel 制造商:ROHM Semiconductor 功能描述:TRANSISTOR 2SA1774EBQ |
| 2SA1774EBTLR | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel |
| 2SA1774EBTLS | 制造商:ROHM Semiconductor 功能描述:TRANS GP BJT PNP 50V 0.15A 3-PIN EMT3F T/R - Tape and Reel |
| 2SA1774G | 功能描述:两极晶体管 - BJT 100mA 60V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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