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参数资料
| 型号： | 2SA1900T100Q |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件页数： | 2/3页 |
| 文件大小： | 79K |
| 代理商： | 2SA1900T100Q |
2SA1900
Transistors
Rev.C
2/2
Electric characteristics curves
Ta=25
°C
Fig.1 Grounded emitter output characteristics
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
1
2
3
4
5
0
0.8
1.0
0.6
0.4
0.2
0
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
IB=
1mA
2mA
Fig.2 DC current gain
vs. collector current
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
h
FE
0.01
0.1
0.001
1 2
10
20
50
100
200
500
1000
5
1
2
VCE=
3V
Ta=25
°C
Fig.3 Collector-emitter saturation voltage
vs.collector current
COLLECTOR CURRENT : IC (A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(mV)
100m
1m
10m
1 2
10
20
50
100
200
500
1000
5
1
2
Ta=25
°C
IC/IB=10
1000
TRANSITION
FREQUENCY
:
f
T
(MHz)
1
0.1
0.2
0.5
10m 20m
50m
1m 2m
5m
100
200
500
10
20
50
1
2
5
EMITTER CURRENT : IE
(A)
Fig.4 Gain bandwith product
vs. emitter current
Ta
=25°C
VCE
=5V
Ta=25
°C
f=1MHz
IE=0A
Fig.5 Collector output capacitance
vs. collector-base voltage
COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR
OUTPUT
CAPACITANCE
:
C
ob(
(pF)
0.1
1
100
10
20
50
100
200
500
1000
5
1
2
COLLECTOR
CURRENT
:
I
C
(A)
Pw
=
10ms
100ms
DC
IC Max. (Pulse)
Fig.6 Safe operating area
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
1
10
0.1
100
5
10
1
2
0.1
0.2
0.5
0.05
0.01
0.02
Ta=25
°C
Single
nonrepeatitive pulse
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|---|---|
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