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参数资料
| 型号： | 2SA1909P |
| 厂商： | SANKEN ELECTRIC CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 10 A, 140 V, PNP, Si, POWER TRANSISTOR |
| 封装： | FM100, TO-3PF, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 28K |
| 代理商： | 2SA1909P |
37
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5101)
Application : Audio and General Purpose
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–140
–6
–10
–4
80(Tc=25°C)
150
–55 to +150
Unit
V
A
W
°C
sAbsolute maximum ratings
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
fT
COB
Ratings
–10max
–140min
50min
–0.5max
20typ
400typ
Unit
A
V
MHz
pF
Conditions
VCB=–140V
VEB=–6V
IC=–50mA
VCE=–4V, IC=–3A
IC=–5A, IB=–0.5A
VCE=–12V, IE=0.5A
VCB=–10V, f=1MHz
2SA1909
(Ta=25°C)
I C– V CE Characteristics (Typical)
h FE– I C Characteristics (Typical)
Safe Operating Area (Single Pulse)
h FE– I C Temperature Characteristics (Typical)
I C– V BE Temperature Characteristics (Typical)
V CE(sat) – I B Characteristics (Typical)
Pc – T a Derating
0
–2
–4
–6
–8
–10
–1
–2
–3
–4
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
–400mA
–25mA
I B=–10mA
–300mA
–200mA
–150mA
–100mA
–75mA
–50mA
0
–3
–2
–1
0
–2.0
–0.5
–1.5
–1.0
Base Current I B(A)
Collector-Emitter
Saturation
Voltage
V
CE(sat)
(V)
I C=–10A
–5A
0
–10
–8
–2
–6
–4
0
–1.5
–1
Base-Emittor Voltage V BE(V)
Collector
Current
I
C
(A)
(V CE=–4V)
125C
(Case
Temp)
25C
(Case
Temp)
–30C
(Case
Temp)
–10
–50
–3
–5
–100
–200
–0.1
–1
–0.5
–10
–30
–5
Collector-Emitter Voltage V CE(V)
Collector
Current
I
C
(A)
Without Heatsink
Natural Cooling
DC
100ms
10ms
0.02
0.1
1
1 0
0
10
30
20
Cut-off
Frequency
f
T
(MH
Z
)
(V CE=–12V)
Emitter Current I E(A)
Typ
0.1
1
3
0.5
1
1 0
100
1000
2000
Time t(ms)
Transient
Thermal
Resistance
θ
j-a
(C/W)
θj-a–t Characteristics
f T– I E Characteristics (Typical)
(V CE=–4V)
–0.02
–0.1
–0.5
–1
–5
–10
20
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
125C
–30C
25C
–0.02
–0.1
–1
–5
–0.5
–10
30
50
100
200
Collector Current I C(A)
DC
Current
Gain
h
FE
(V CE=–4V)
Typ
80
60
40
20
3.5
0
2 5
5 0
7 5
100
125
150
Ambient Temperature Ta(C)
Maximum
Power
Dissipation
P
C
(W)
With
Infinite
heatsink
Without Heatsink
sTypical Switching Characteristics (Common Emitter)
VCC
(V)
–60
RL
(
)
12
IC
(A)
–5
VBB2
(V)
5
IB2
(A)
0.5
ton
(
s)
0.17typ
tstg
(
s)
1.86typ
tf
(
s)
0.27typ
IB1
(A)
–0.5
VBB1
(V)
–10
External Dimensions FM100(TO3PF)
4.4
1.5
BE
C
5.45±0.1
3.3±0.2
1.6
3.3
1.75
0.8
±0.2
2.15
1.05
+0.2
-0.1
5.45±0.1
23.0
±0.3
16.2
9.5
±0.2
5.5
15.6±0.2
5.5±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3.0
0.8
a
b
Weight : Approx 6.0g
a. Part No.
b. Lot No.
hFE Rank O(50to100), P(70to140), Y(90to180)
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| 2SA1930(LBS2MATQ,M | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:180V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，1A 电流 - 集电极截止（最大值）:5μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 频率 - 跃迁:200MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
| 2SA1930(ONK,Q,M) | 功能描述:TRANS PNP 2A 180V TO220-3 制造商:toshiba semiconductor and storage 系列:- 包装:散装 零件状态:停產 晶体管类型:PNP 电流 - 集电极（Ic）（最大值）:2A 电压 - 集射极击穿（最大值）:180V 不同?Ib，Ic 时的?Vce 饱和值（最大值）:1V @ 100mA，1A 电流 - 集电极截止（最大值）:5μA（ICBO） 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:100 @ 100mA，5V 功率 - 最大值:2W 频率 - 跃迁:200MHz 工作温度:150°C（TJ） 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商器件封装:TO-220NIS 标准包装:1 |
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