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参数资料
| 型号： | 2SA1954-B |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | USM, 2-2E1A, SC-70, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 261K |
| 代理商： | 2SA1954-B |
2SA1954
2003-03-27
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1954
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 500 mA (max)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Marking
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1954-B(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1954BTE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP USM |
| 2SA1955-A(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1955-B(TE85L,F) | 制造商:Toshiba 功能描述:PNP |
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
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