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参数资料
| 型号： | 2SA1955FV-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-1L1A, VESM, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 217K |
| 代理商： | 2SA1955FV-A |
2SA1955FV
2004-06-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1955FV
General Purpose Amplifier Applications
Switching and Muting Switch Application
Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
Large collector current: IC = 400 mA (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
150 *
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mmt)
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1L1A
Weight: 0.0015g (typ.)
1.BASE
2.EMITTER
3.COLLECTOR
VESM
1.2
±
0.
05
0.3
2
±
0.05
1
2
3
0.4
0.
22
±
0.05
0.8±0.05
0.8
±
0.
05
1.2±0.05
0.5
±
0.
05
0.1
3
±
0.05
0.5mm
0.45mm
0.4mm
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1955FVATPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM 制造商:Toshiba America Electronic Components 功能描述:Transistors Bipolar - BJT PNP Trans -0.4A LN -12V VCEO |
| 2SA1955FVBTPL3Z | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
| 2SA19610QAHW | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SA19620TU | 制造商:Fairchild Semiconductor Corporation 功能描述: |
| 2SA1962-O | 功能描述:两极晶体管 - BJT PNP 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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