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参数资料
| 型号： | 2SA1977FB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/12页 |
| 文件大小： | 58K |
| 代理商： | 2SA1977FB |
DATA SHEET
Silicon Transistor
2SA1977
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
1996
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
PRELIMINARY DATA SHEET
FEATURES
PACKAGE DIMENSION (in millimeters)
High fT
fT = 8.5 GHz TYP.
High gain
| S21e |
2 = 12.0 dB TYP. @f = 1.0 GHz, V
CE =
8 V, IC = 20 mA
High-speed switching characterstics
Equivalent NPN transistor is the 2SC3583.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°°C)
Parameter
Symbol
Rating
Unit
Collector to Base Voltage
VCB0
20
V
Collector to Emitter Voltage
VCE0
12
V
Emitter to Base Voltage
VEB0
3.0
V
Collector Current
IC
50
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cutoff Current
ICB0
VCB =
10 V
0.1
A
Emitter Cutoff Current
IEB0
VEB =
1 V
0.1
A
DC Current Gain
hFE
VCE =
8 V, IC = 20 mA
20
100
Gain Bandwidth Product
fT
VCE =
8 V, IC = 20 mA, f = 1 GHz
6.0
8.5
GHz
Collector Capacitance
Cre*VCB =
10 V, IE = 0, f = 1 MHz
0.5
1
pF
Insertion Power Gain
| S21e |
2
VCE =
8 V, IC = 20 mA, f = 1.0 GHz
8.0
12.0
dB
Noise Figure
NF
VCE =
8 V, IC = 3 mA, f = 1 GHz
1.5
3
dB
*
Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
hFE Classification
Rank
FB
Marking
T92
hFE
20 to 100
2.8+0.2
_
1.5
0.65
+0.1
–0.15
2
1
3
2.9
+
0.2
_
0.95
0.4
+0.1
–0.05
0.4
+0.1
–0.05
Marking
0.16
+0.1
–0.06
0.3
1.1
to
1.4
0
to
0.1
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
Marking; T92
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PDF描述 |
|---|---|
| 2SC2149 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC2570 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 2SC4053 | 5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC4234 | 3 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 2SC458LGB | 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1977-L-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:GP BJT |
| 2SA1977-T1B-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:8.5GHz 噪声系数（dB，不同 f 时的典型值）:1.5dB @ 1GHz 增益:12dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:SOT-23 标准包装:3,000 |
| 2SA1977-T1B-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SA1978-A | 功能描述:RF TRANSISTOR PNP SOT-23 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:PNP 电压 - 集射极击穿（最大值）:12V 频率 - 跃迁:5.5GHz 噪声系数（dB，不同 f 时的典型值）:2dB @ 1GHz 增益:10dB 功率 - 最大值:200mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:20 @ 15mA，10V 电流 - 集电极（Ic）（最大值）:50mA 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商器件封装:- 标准包装:1 |
| 2SA1978-FB(T1B-A) | 制造商:Renesas Electronics Corporation 功能描述: |
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