参数资料
型号: 2SC4234
元件分类: 功率晶体管
英文描述: 3 A, 800 V, NPN, Si, POWER TRANSISTOR
封装: ITO-220, 3 PIN
文件页数: 1/12页
文件大小: 417K
代理商: 2SC4234
Unit : mm
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Case : ITO-220
HFX Series
Switching Power Transistor
3A NPN
2SC4234
(TP3V80HFX)
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55`150
Junction Temperature
Tj
150
Collector to Base Voltage
VCBO
1200
V
Collector to Emitter Voltage
VCEO
800
V
Emitter to Base Voltage
VEBO
7V
Collector Current DC
IC
3A
Collector Current Peak
ICP
6
Base Current DC
IB
1
A
Base Current Peak
IBP
2
Total Transistor Dissipation
PT
Tc = 25
45
W
Dielectric Strength
Vdis
Terminals to cased, AC 1 minute
2
kV
Mounting Torque
TOR
(Recommended torque : 0.3Nm)
0.5
Nm
Electrical Characteristics (Tc=25)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
VCEO(sus)
IC = 0.1A
Min 800
V
Collector Cutoff Current
ICBO
At rated Voltage
Max 0.1
mA
ICEO
Max 0.1
Emitter Cutoff Current
IEBO
At rated Voltage
Max 0.1
mA
DC Current Gain
hFE
VCE = 5V, IC = 1.5A
Min 8
hFEL
VCE = 5V, IC = 1mA
Min 7
Collector to Emitter Saturation Voltage
VCE(sat)
IC = 1.5A
Max 1.0
V
Base to Emitter Saturation Voltage
VBE(sat)
IB = 0.3A
Max 1.5
V
Thermal Resistance
jc
Junction to case
Max 2.77 /W
Transition Frequency
fT
VCE = 10V, IC = 0.3A
TYP 8
MHz
Turn on Time
ton
IC = 1.5A
Max 0.5
Storage Time
ts
IB1 = 0.3A, IB2 = 0.6A
Max 3.5
s
Fall Time
tf
RL = 170, VBB2 = 4V
Max 0.3
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相关代理商/技术参数
参数描述
2SC4234-7000 功能描述:两极晶体管 - BJT VCEO=800 IC=3 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4234-7012 功能描述:两极晶体管 - BJT VCEO=800 IC=3 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4234-7100 功能描述:两极晶体管 - BJT VCEO=800 IC=3 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4234-7112 功能描述:两极晶体管 - BJT VCEO=800 IC=3 HFE=8 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4235 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor