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参数资料
| 型号： | 2SA1987 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-21F1A, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 129K |
| 代理商： | 2SA1987 |
2SA1987
2006-11-09
3
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Base-emitter voltage VBE (V)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (A)
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Safe Operating Area
Common emitter
Tc = 25°C
0
IB = 10 mA
800
4
8
12
16
20
2
4
6
8
10
50
600
400
250
200
150
100
40
20
30
Common emitter
VCE = 5 V
0
Tc = 100°C
4
8
12
16
20
25
0.4
0.8
1.2
1.6
2.0
25
Common emitter
VCE = 5 V
1
0.01
25
10
30
100
300
0.1
1
10
Tc = 100°C
100
3
Common emitter
IC/IB = 10
Tc = 100°C
0.01
0.1
1
0.1
3
1
25
0.3
10
100
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (pulsed)*
DC operation
Tc = 25°C
1
3
10
30
100 ms*
10 ms*
1 ms*
VCEO max
0.3
100
300
1000
1
0.03
0.1
30
IC max (continuous)
10
100
0.01
3
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA1987-R | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 2SA2009G-S | 20 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2011 | 6 A, 12 V, PNP, Si, POWER TRANSISTOR |
| 2SA2011 | 6 A, 12 V, PNP, Si, POWER TRANSISTOR |
| 2SA2018HT2L | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA1987-O(Q) | 制造商:Toshiba 功能描述:PNP -230V -15A 80 to 160 TO3P(L) Bulk 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 230V 15A TO-3PL 制造商:Toshiba America Electronic Components 功能描述:Transistor 制造商:Toshiba 功能描述:Trans GP BJT PNP 230V 15A 3-Pin(3+Tab) TO-3PL |
| 2SA1987-R(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SA1KBOX | 制造商:Metallics 功能描述:Exact Equal/ 1-5 Days |
| 2SA200 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-1 -15V -.005A .03 |
| 2SA2002 | 制造商:ISAHAYA 制造商全称:Isahaya Electronics Corporation 功能描述:FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE) |
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