参数资料
型号: 2SA2056
元件分类: 小信号晶体管
英文描述: Si, SMALL SIGNAL TRANSISTOR
封装: 2-3S1A, 3 PIN
文件页数: 1/5页
文件大小: 168K
代理商: 2SA2056
2SA2056
2006-11-09
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2056
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: hFE = 200 to 500 (IC = 0.5 A)
Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max)
High-speed switching: tf = 90 ns (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
DC
IC
2.0
Collector current
Pulse
ICP
3.5
A
Base current
IB
200
mA
t = 10 s
1000
Collector power
dissipation
DC
PC
(Note 1)
625
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2
)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
相关PDF资料
PDF描述
2SA2058 1500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2069 1500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2081 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2082 50 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2097 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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