参数资料
型号: 2SA2056
元件分类: 小信号晶体管
英文描述: Si, SMALL SIGNAL TRANSISTOR
封装: 2-3S1A, 3 PIN
文件页数: 2/5页
文件大小: 168K
代理商: 2SA2056
2SA2056
2006-11-09
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
V
hFE (1)
VCE = 2 V, IC = 0.3 A
200
500
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
100
Collector-emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB = 0.033 A
0.2
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB = 0.033 A
1.1
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
20
pF
Rise time
tr
60
Storage time
tstg
250
Switching time
Fall time
tf
See Figure 1 circuit diagram.
VCC ≈ 30 V, RL = 30
IB1 = IB2 = 33 mA
90
ns
Marking
Figure 1
Switching Time Test Circuit &
Timing Chart
IB2
IB1
20
s
Output
Input
IB2
IB1
R
L
VCC
Duty cycle
< 1%
W
F
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
相关PDF资料
PDF描述
2SA2058 1500 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2069 1500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2081 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2082 50 mA, 10 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SA2097 5000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SA2056 (TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM T/R
2SA2056(TE85L,F) 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT PNP 50V 2A 3PIN TSM - Tape and Reel 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP 50V 2A TSM 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 50V 2A hfe200-500 90nsTSM
2SA2056_06 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SA2057 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type
2SA20570P 功能描述:TRANS PNP PWR AMP 60V 3A TO-220D RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR