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参数资料
| 型号： | 2SA2081 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | CMPAK-3 |
| 文件页数： | 2/6页 |
| 文件大小： | 61K |
| 代理商： | 2SA2081 |
2SA2081
Rev.0, Feb. 2002, page 2 of 6
Absolute Maximum Ratings
(Ta = 25
°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
–55
V
Collector to emitter voltage
V
CEO
–55
V
Emitter to base voltage
V
EBO
–5
V
Collector current
I
C
–100
mA
Collector power dissipation
P
C*
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
*Value on the glass epoxy board (10 mm x 10 mm x 0.7 mm)
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–55
VI
C = –10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–55
VI
C = –1 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
–5
VI
E = –10 A, IC = 0
Collector cutoff current
I
CBO
–0.5
AV
CB = –30 V, IE = 0
Emitter cutoff current
I
EBO
–0.5
AV
EB = –2 V, IC = 0
DC current transfer ratio
h
FE*
1
160
800
V
CE = –12 V, IC = –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
–0.5
V
I
C = –10 mA, IB = –1 mA
Base to emitter voltage
V
BE
–0.75
V
CE = –12 V, IC = –2 mA
Notes: 1. The 2SA2081 is grouped by h
FE as follows.
Grade
C
D
E
Mark
CC
CD
CE
h
FE
160 to 320
250 to 500
400 to 800
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2081C | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2081CCTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081CDTL-E | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:Silicon PNP Epitaxial |
| 2SA2081D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
| 2SA2081E | 制造商:未知厂家 制造商全称:未知厂家 功能描述:BJT |
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