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参数资料
| 型号： | 2SA2142 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 600 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | 2-7J1A, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 151K |
| 代理商： | 2SA2142 |
2SA2142
2005-02-01
2
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 600 V, IE = 0
10
A
Emitter cutoff current
IEBO
VEB = 7 V, IC = 0
1
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
600
V
hFE (1)
VCE = 5 V, IC = 1 mA
70
500
DC current gain
hFE (2)
VCE = 5 V, IC = 50 mA
100
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 100 mA, IB = 10 mA
0.76
0.9
V
Transition frequency
fT
VCE = 5 V, IC = 50 mA
―
35
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
24
―
pF
Rise time
tr
0.2
Storage time
tstg
2.3
Switching time
Fall time
tf
IB1 = 10 mA, IB2 = 20 mA,
Duty Cycle ≤ 1%
0.2
s
Marking
Input
IB1
IB2
Output
VCC ≒ 200 V
2k
20 s
I B1
IB2
A2142
Product No.
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2142(TE16L1 | 制造商:Toshiba America Electronic Components 功能描述:Semi, Bipolar, Transistor, PNP, Power, T |
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| 2SA2142(TE16L1NQ) | 功能描述:两极晶体管 - BJT High-Voltage Switch Vceo -600V Ta 25c RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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| 2SA2151A | 制造商:Sanken Electric Co Ltd 功能描述:Box 制造商:Sanken Electric Co Ltd 功能描述:Bulk 制造商:Sanken Electric Co Ltd 功能描述:TRANS PNP 230V 15A TO3P |
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