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参数资料
| 型号： | 2SA2154-GR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 135K |
| 代理商： | 2SA2154-GR |
2SA2154
2005-03-23
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA2154
General-Purpose Amplifier Applications
High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
Excellent hFE linearity
: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE
: hFE = 120~400
Complementary to 2SC6026
Lead (Pb) free
Maximum Ratings (Ta = 25°C)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cutoff current
ICBO
VCB = 50 V, IE = 0
0.1
A
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
0.1
A
DC current gain
hFE (Note)
VCE = 6 V, IC = 2 mA
120
400
Collector-emitter saturation voltage
VCE (sat)
IC = 100 mA, IB = 10 mA
0.18
0.3
V
Transition frequency
fT
VCE = 10 V, IC = 1 mA
80
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.6
pF
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
fSM
1.BASE
2.EMITTER
3.COLLECTOR
0.2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.15±
0.05
0.
35
±0
.0
5
0.
6±
0.
05
1
2
0.1±0.05
0.48
+0
.0
2
-0
.0
4
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
100
mA
Base current
IB
30
mA
Collector power dissipation
PC
50
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Type Name
hFE Rank
8F
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2154-GR(TPL3) | 功能描述:两极晶体管 - BJT 100mA -0.3V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154MFV | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications |
| 2SA2154MFV-GR | 功能描述:两极晶体管 - BJT INCORRECT MOUSER P/N RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154MFV-GR(TPL3 | 功能描述:两极晶体管 - BJT -150mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154MFV-GR(TPL3) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 0.15A 3-Pin VESM T/R 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR PNP VESM |
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