参数资料
型号: 2SA2183
元件分类: 功率晶体管
英文描述: 5 A, 60 V, PNP, Si, POWER TRANSISTOR
封装: LEAD FREE, 2-10U1A, SC-67, 3 PIN
文件页数: 1/5页
文件大小: 179K
代理商: 2SA2183
2SA2183
2006-11-16
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2183
High Current Switching Applications
Low collector-emitter saturation : VCE(sat) = 1.0 V(max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
DC
IC
5.0
A
Collector current
Pulse
ICP
8.0
A
Base current
IB
0.5
A
Ta = 25°C
2
W
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1A
Weight: 1.7 g (typ.)
1 : Base
2 : Collector
3 : Emitter
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