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参数资料
| 型号： | 2SA2179 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 13 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | TO-220ML, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 37K |
| 代理商： | 2SA2179 |
2SA2179
No. A0199-1/4
Applications
High-speed switching applications (switching regulators, drive circuit).
Features
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
--50
V
Collector-to-Emitter Voltage
VCEO
--50
V
Emitter-to-Base Voltage
VEBO
--6
V
Collector Current
IC
--13
A
Collector Current (Pulse)
ICP
--15
A
Base Current
IB
--2
A
Collector Dissipation
PC
2W
Tc=25
°C25
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=--40V, IE=0A
--10
A
Emitter Cutoff Current
IEBO
VEB=--4V, IC=0A
--10
A
DC Current Gain
hFE1VCE=--2V, IC=--270mA
200
500
hFE2VCE=--2V, IC=--8.1A
50
Gain-Bandwidth Product
fT
VCE=--5V, IC=--700mA
110
MHz
Output Capacitance
Cob
VCB=--10V, f=1MHz
100
pF
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0199
N2505FA MS IM TB-00001828
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2179
PNP Epitaxial Planar Silicon Transistor
50V / 13A High-Speed Switching Applications
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| 2SA2195 | 1700 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2204-TL | 2500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2180 | 功能描述:TRANS PNP 50V 5A TO-220ML RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| 2SA2181 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching |
| 2SA2182(Q) | 功能描述:两极晶体管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2182(STA4,Q) | 功能描述:两极晶体管 - BJT PNP 230V 1A Transistor RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2183(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 50V 2A 3-Pin TSM |
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