- 您现在的位置：买卖IC网 > PDF目录30494 > 2SA2151AY 15 A, 230 V, PNP, Si, POWER TRANSISTOR PDF资料下载
参数资料
| 型号： | 2SA2151AY |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 279K |
| 代理商： | 2SA2151AY |
Audio Amplification Transistor
2SA2151A
2
ELECTRICAL CHARACTERISTICS at TA = 25°C
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Collector-Cutoff Current
ICBO
VCB = –230 V
–
–10
μA
Emitter Cutoff Current
IEBO
VEB = –6 V
–
–10
μA
Collector-Emitter Voltage
V(BR)CEO
IC = –50 mA
–230
–
V
DC Current Transfer Ratio*
hFE
VCE = –4 V, IC = –3 A
50
–
180
–
Collector-Emitter Saturation Voltage
VCE(sat)
IC = –5 A, IB = –0.5 A
–
–0.5
V
Cutoff Frequency
fT
VCE = –12 V, IE = 0.5 A
–
20
–
MHz
Output Capacitance
COB
VCB = –10 V, IE = 0 A, f = 1 MHz
–
450
–
pF
*hFE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).
ABSOLUTE MAXIMUM RATINGS at TA = 25°C
Characteristic
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
–230
V
Collector-Emitter Voltage
VCEO
–230
V
Emitter-Base Voltage
VEBO
–6
V
Collector Current
IC
–15
A
Base Current
IB
–4
A
Collector Power Dissipation
PC
160
W
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
–55 to150
°C
SELECTION GUIDE
Part Number
Type
hFE Rating
Packing
2SA2151A*
PNP
Range O: 50 to 100
Bulk, 100 pieces
Range P: 70 tp 140
Range Y: 90 to 180
*Specify hFE range when ordering. If no hFE range is specified, order will be fulfilled with either or both range O and range Y,
depending upon availability.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
相关PDF资料 |
PDF描述 |
|---|---|
| 2SA2154CT | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2154CT-GR | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2180 | 5 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-220AB |
| 2SA2203 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2203-TL | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2153 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2153-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2SA2154CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications |
| 2SA2154CT-GR(TPL3) | 功能描述:两极晶体管 - BJT 100mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
发布紧急采购，3分钟左右您将得到回复。