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参数资料
| 型号： | 2SA2151AY |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 230 V, PNP, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 5/7页 |
| 文件大小： | 279K |
| 代理商： | 2SA2151AY |
Audio Amplification Transistor
2SA2151A
5
9.6 ±0.3
15.8 ±0.2
5.0 MAX
2.1 MAX
3.2
±0.1
5.0
±0.2
Terminal dimension at lead tips
2(2×)
+0.2
–0.1
3
+0.2
–0.1
1.0
(3×)
+0.2
–0.1
0.6
+0.2
–0.1
1.7
+0.2
–0.3
20.0
MIN
6.0
±0.2
3.5
NOM
Branding
XXXXXXXX
Terminal core material: Cu
Terminal treatment: Ni plating and solder dip
Heat sink core material: Cu
Heat sink treatment: Ni plating
Leadform number: 100
Dimensions in millimeters
Branding codes (exact appearance at manufacturer discretion):
1st line,
type: A2151A
2nd line, lot:
YM
H
Where: Y is the last digit of the year of manufacture
M is the month (1 to 9, O, N, D)
H is the hFE rating (O, P, or Y; for values see
footnote, Electrical Characteristics table)
Pin Assignments:
1. Base
2. Collector
3. Emitter
123
2×P5.45 ±0.1
13.6 ±0.2
14.0 ±0.3
15.6 ±0.3
19.9
±0.3
2.0
±0.2
1.8
±0.3
PACKAGE OUTLINE DRAWING, TO-3P
Leadframe plating Pb-free. Device composition
includes high-temperature solder (Pb >85%),
which is exempted from the RoHS directive.
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036 (508) 853-5000
www.allegromicro.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA2153 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
| 2SA2153-TD-E | 功能描述:两极晶体管 - BJT BIP PNP 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA2154 | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:Silicon PNP Epitaxial Type (PCT Process) General-Purpose Amplifier Applications |
| 2SA2154CT | 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:General-Purpose Amplifier Applications |
| 2SA2154CT-GR(TPL3) | 功能描述:两极晶体管 - BJT 100mA -50V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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