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参数资料
| 型号： | 2SA854ST146R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SPT, SC-72, 3 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 72K |
| 代理商： | 2SA854ST146R |
2SA854S
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
Min.
40
32
5
200
1
390
0.6
V
IC
=
100A
IC
=
1mA
IE
=
100A
VCB
=
20V
VEB
=
4V
VCE
=
3V, IC=100mA
IC/IB
=
500mA/50mA
VCE
=
5V, IE=20mA, f=100MHz
VCB
=
10V, IE=0A, f=1MHz
V
A
120
V
MHz
pF
8
Typ.
Max.
Unit
Conditions
DC current transfer ratio
Transition frequency
Output capacitance
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T146
3000
hFE
QR
2SA854S
Type
hFE values are classified as follows :
Item
Q
R
hFE
120~270
180~390
Electrical characteristic curves
Fig.1 Grounded emitter propagation
-0.2
0
-500
-200
-100
-50
-20
-10
-5
-2
-1
-0.5
-0.2
-0.1
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2
VCE
=
3V
COLLECTOR
CURRENT
:
I
C
(
mA)
BASE TO EMITTER VOLTAGE : VBE
(V)
Ta
=100
°C
25
°C
55°C
Fig.2 Grounded emitter output
characteristics ( )
-1
-40
-80
-3
0
-20
-60
-100
0-2
-4
-5
COLLECTOR
CURRENT
:
I
C
(
mA)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Ta
=25
°C
IB
=0A
0.1mA
0.2mA
0.3mA
0.4mA
0.5mA
0.6mA
0.7mA
0.8mA
0.9mA
1mA
Ι
-200
-400
-10
-5
0
-100
-300
-500
0
COLLECTOR
CURRENT
:
I
C
(
mA)
Ta
=25
°C
IB
=0A
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.3 Grounded emitter output
characteristics ( )
ΙΙ
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SA854STPQ | 功能描述:两极晶体管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA854STPR | 功能描述:两极晶体管 - BJT DVR PNP 32V 0.5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SA857 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB |
| 2SA858 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-150V -.05A .5W ECB |
| 2SA866 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-30V -.1A .3W EBC |
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