参数资料
型号: 2SB1015A-O
元件分类: 功率晶体管
英文描述: 3 A, 60 V, PNP, Si, POWER TRANSISTOR
封装: 2-10R1A, SC-67, 3 PIN
文件页数: 3/4页
文件大小: 111K
代理商: 2SB1015A-O
2SB1015A
2003-02-04
3
Collector-emitter voltage VCE (V)
IC – VCE
Co
lle
ct
or
cu
rr
e
nt
I
C
(A
)
Collector current IC (A)
hFE – IC
D
C
cu
rr
en
t
ga
in
h
FE
Time t (s)
Rth (t) – tw
T
ran
si
en
tth
er
ma
lre
si
st
an
ce
R
th
(t)
(
°C
/W
)
Collector current IC (A)
VCE (sat) – IC
C
ol
le
ct
or
-e
mi
tte
rs
atu
rati
on
vol
tag
e
V
CE
(sat)
(V
)
Collector-emitter voltage VCE (V)
Safe Operating Area
Co
lle
ct
or
cu
rr
e
nt
I
C
(A
)
Base-emitter voltage VBE (V)
IC – VBE
Co
lle
ct
or
cu
rr
e
nt
I
C
(A
)
1000
-0.02
300
100
50
20
-0.1
-3
Tc
= 100°C
25
-25
Common emitter
VCE = -5 V
500
-0.3
-1
-0.02
-0.3
-0.1
-0.02
-0.1
-1
-5
Tc
= 100°C
25
-25
Common emitter
IC/IB = 10
-0.05
-0.5
-0.3
-3
0.1
1
10
10-
2
10-
3
10-
1
10
2
100
1000
(1) Ta
= 25°C
(2) Tc
= 25°C
(1) Without heat sink
(2) Infinite heat sink
25
-3.0
-2.0
-1.0
-0.8
-1.2
-1.6
-0.4
0
Common emitter
VCE = -5 V
0
-25
Tc
= 100°C
-4
-3
-2
-1
-2
-3
-4
-5
-1
0
-20
-30
-60
IB = -10 mA
-40
-50
-70
0
-80
Common emitter
Tc
= 25°C
0
*: Single nonrepetitive pulse
Tc
= 25°C
Curves must be derated linearly
with increase in temperature.
-0.2
-1
DC operation
Tc
= 25°C
100 ms*
IC max (pulsed)*
-3
-10
-30
-100
-0.5
-1
-3
-5
-10
IC max (continuous)
1 ms*
10 ms*
VCEO max
1 s*
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相关代理商/技术参数
参数描述
2SB1015AY 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB
2SB1015A-Y(F) 制造商:Toshiba America Electronic Components 功能描述:
2SB1015-GR 制造商:Toshiba America Electronic Components 功能描述:
2SB1015-Y 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SB1016 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors