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参数资料
| 型号： | 2SB1016A-O |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封装： | LEAD FREE, 2-10R1A, 3 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 131K |
| 代理商： | 2SB1016A-O |
2SB1016A
2006-11-21
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
High breakdown voltage: VCEO = 100 V
Low collector-emitter saturation voltage: VCE (sat) = 2.0 V (max)
Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
5
A
Base current
IB
0.5
A
Collector power dissipation
(Tc = 25°C)
PC
30
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1016A-O(F) | 制造商:Toshiba 功能描述:PNP Bulk |
| 2SB1016AY | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-220AB |
| 2SB1016A-Y(F) | 制造商:Toshiba 功能描述:PNP -100V -5A 120 to 240 TO220NIS 制造商:Toshiba 功能描述:PNP -100V -5A 120 to 240 TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:Vceo100V,Ic5A,Vce2V(sat),hfe,120to240,Co |
| 2SB1016Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1017 | 制造商:ISC 制造商全称:Inchange Semiconductor Company Limited 功能描述:Silicon PNP Power Transistors |
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