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参数资料
| 型号： | 2SB1132T100P |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | MPT3, SC-62, 3 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 75K |
| 代理商： | 2SB1132T100P |
2SB1132 / 2SA1515S / 2SB1237
Transistors
Rev.B
2/4
Absolute maximum ratings (Ta=25
°C)
1 Single pulse, Pw=100ms
2 When mounted on a 40 40 0.7 mm ceramic board.
3 Printed circuit board, 1.7 mm thick, collector copper plating 100mm2or larger.
+ +
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
40
V
A(DC)
W
32
5
1
IC
A(Pulse)
2
0.5
2
0.3
1
1
2
3
2SB1132
2SA1515S
2SB1237
150
55 to +150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
C
Electrical characteristics (Ta=25
°C)
Transition frequency
Output capacitance
DC current
transfer ratio
VCE
=
3V, IC= 0.1A
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
40
32
5
82
0.2
150
20
0.5
390
0.5
30
VIC
=
50A
IC
=
1mA
IE
=
50A
VCB
=
20V
VEB
=
4V
IC/IB
=
500mA/50mA
VCE
=
5V, IE=50mA, f=30MHz
VCB
=
10V, IE=0A, f=1MHz
V
A
120
2SB1132, 2SB1237
2SA1515S
390
V
MHz
pF
Typ.
Max.
Unit
Conditions
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Packaging specifications and hFE
Package
Code
Basic ordering unit (pieces)
Taping
T100
TP
1000
5000
PQR
hFE
QR
2SB1132
2SA1515S
TU2
2500
PQR
2SB1237
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1237TU2P | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1132T100/P | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1132T100/R | 1000 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1140-S | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1140-R | 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1132T100Q | 功能描述:两极晶体管 - BJT PNP 32V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1132T100R | 功能描述:两极晶体管 - BJT PNP 32V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1132T113Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132T200Q | 制造商:ROHM Semiconductor 功能描述: |
| 2SB1132-X-AB3-R | 制造商:UTC-IC 制造商全称:UTC-IC 功能描述:MEDIUM POWER TRANSISTOR |
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