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参数资料
| 型号： | 2SB1260-Q-TP |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, PLASTIC, PACKAGE-3 |
| 文件页数： | 1/2页 |
| 文件大小： | 185K |
| 代理商： | 2SB1260-Q-TP |
2SB1260-P
PNP
Plastic-Encapsulate
Transistors
Features
Power dissipation: PCM = 0.5W(Tamb=25 )
Collector current: ICM = -1A
Collector-base voltage: V(BR)CBO = -80V
Operating and storage junction temperature range
TJ, Tstg: -55
to + 150
Electrical Characteristics @ 25
Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Unit
V(BR)CEO
Collector-Emitter Breakdown Voltage
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=-50
A, IE=0)
-80
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector cut-off Current
(VCB=-60V, IE=0)
---
-1.0
IEBO
Emitter cut-off Current
(VEB=-4V, IC=0)
---
-1.0
hFE
DC current gain
(VCE=-3V, IC=-0.1A)
82
---
390
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=-0.5A, IB=-0.05A)
fT
Transition Frequency
(VCE=-5.0Vdc, IC=-0.05Adc,F=30MHZ)
CLASSIFICATION OF hFE
Rank
P
Q
R
Range
82-180
120-270
180-390
Marking
ZL
SOT-89
omponents
20736 Marilla
Street Chatsworth
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MCC
Revision: A
2011/01/01
TM
Micro Commercial Components
E
B
C
MHZ
---
-80
uA
V
uA
(IC=-1mA, IB=0)
(IE=-50
A, IC=0)
---
-5.0
V
80
---
---
-0.4
www.mccsemi.com
1 of 2
B
A
E
D
G
H
F
K
J
C
1
2
3
1.Base
2.Collector
3.Emitter
2SB1260-Q
2SB1260-R
4.25
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260T100 | 制造商:Rohm 功能描述:PNP Cut Tape |
| 2SB1260T100P | 功能描述:两极晶体管 - BJT DVR PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100Q | 功能描述:两极晶体管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1261-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
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