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参数资料
| 型号： | 2SB1260G-Q-TN3-R |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 封装： | HALOGEN FREE PACKAGE-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 230K |
| 代理商： | 2SB1260G-Q-TN3-R |
2SB1260
PNP SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD
4 of 4
www.unisonic.com.tw
QW-R208-017,E
TYPICAL CHARACTERICS(Cont.)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SB1260G-P-TN3-R | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 2SB1260G-R-TN3-R | 1 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-252 |
| 2SB1260T100Q | 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1260T100/Q | 1 A, 80 V, PNP, Si, POWER TRANSISTOR |
| 2SB1261-Z-T1K | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SB1260T100 | 制造商:Rohm 功能描述:PNP Cut Tape |
| 2SB1260T100P | 功能描述:两极晶体管 - BJT DVR PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100Q | 功能描述:两极晶体管 - BJT PNP 80V 1A SO-89 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1260T100R | 功能描述:两极晶体管 - BJT PNP 80V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SB1261-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:PNP PWR Transistor,60V,3.0A,TO-252 制造商:Renesas 功能描述:Trans GP BJT PNP 60V 3A 3-Pin(2+Tab) TO-252 |
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