参数资料
型号: 2SB1412PTL
元件分类: 小信号晶体管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: CPT3, SC-63, 3 PIN
文件页数: 2/4页
文件大小: 186K
代理商: 2SB1412PTL
2/3
www.rohm.com
c
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.C
Data Sheet
2SB1412
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
TL
2500
hFE
PQR
2SB1412
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
Electrical characteristic curves
Fig.1
Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1m
2m
5m
10m
20m
200m
100m
50m
500m
1
2
10
5
VCE
=
2V
25
°C
25
°C
Ta
=100
°C
Fig.2
Grounded emitter output
characteristics
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0
0.4
0.8
1.2
1.6
2.0
1
2
3
5
4
0
IB
=0A
20mA
25mA
30mA
10mA
5mA
15mA
Ta
=25
°C
50mA
45mA
40mA
35mA
Fig.3
DC current gain vs.
collector current ( )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Ta=25
°C
2V
VCE=
5V
1V
1m
5m 0.01
0.05
1 2 5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
Fig.4 DC current gain vs.
collector current ( )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
VCE
= 1V
1m
5m 0.01
0.05
1 2
5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
25
°C
25
°C
Ta
=100
°C
Fig.5 DC current gain vs.
collector current (
)
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
1m
5m 0.01
0.05
1 2
5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
25
°C
25
°C
Ta
=100
°C
VCE
= 2V
Fig.6
Collector-emitter saturation
voltage vs. collector current ( )
IC/IB
=50/1
/1
Ta
=25°C
40/1
30/1
10/1
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
1 2
5 10
0.0-0.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.7
Collector-emitter saturation
voltage vs. collector current ( )
Ta
=100°C
25
°C
lC/lB
=10
25°C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
1 2 5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.8
Collector-emitter saturation
voltage vs. collector current (
)
Ta
=100°C
25°C
25
°C
lC/lB
=30
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
1 2 5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.9 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=100°C
25°C
25
°C
lC/lB
=40
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V
)
COLLECTOR CURRENT : IC
(A)
1 2
5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
相关PDF资料
PDF描述
2SB1418AR 2 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1418Q 2 A, 60 V, PNP, Si, POWER TRANSISTOR
2SB1418AP 2 A, 80 V, PNP, Si, POWER TRANSISTOR
2SB1418P 2 A, 60 V, PNP, Si, POWER TRANSISTOR
2SB1426T92/QR 3000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
相关代理商/技术参数
参数描述
2SB1412TL/Q 制造商:ROHM Semiconductor 功能描述:5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
2SB1412TLP 功能描述:两极晶体管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1412TLQ 功能描述:两极晶体管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1412TLR 功能描述:两极晶体管 - BJT PNP 20V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SB1412TRR 功能描述:两极晶体管 - BJT PNP LOW VCE RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2