参数资料
型号: 2SB1554O
厂商: PANASONIC CORP
元件分类: 功率晶体管
英文描述: 4 A, 60 V, PNP, Si, POWER TRANSISTOR
封装: MT4, 3 PIN
文件页数: 1/4页
文件大小: 173K
代理商: 2SB1554O
1
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
s Features
q
High forward current transfer ratio hFE which has satisfactory linearity
q
Allowing automatic insertion with radial taping
s Absolute Maximum Ratings (T
C=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
Ratings
–60
–20
–8
–4
–2
15
2
150
–55 to +150
Unit
V
A
W
C
s Electrical Characteristics (T
C=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
*
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –60V, IE = 0
VCE = –50V, IB = 0
VEB = –15V, IC = 0
IC = –10mA, IB = 0
VCE = –4V, IC = – 0.8A
VCE = –4V, IC = –2A
IC = –2A, IB = –100mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –2A,
IB1 = –100mA, IB2 = 100mA,
VCC = –50V
min
–60
80
30
typ
25
0.4
0.6
0.25
max
–10
–50
–10
400
–1.0
–1.5
Unit
A
V
MHz
s
TC=25°C
Ta=25
°C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±0.2
0.55
±0.1
2.5
±0.2
2.5
±0.2
4.2
±0.2
13.0
±0.2
2.5
±0.2
18.0
±0.5
Solder
Dip
5.0
±0.1
2.25
±0.2
1.2
±0.1
0.65
±0.1
0.55
±0.1
C1.0
90
°
C1.0
123
1.05
±0.1
0.35
±0.1
*h
FE1 Rank classification
Rank
Q
P
O
hFE1
80 to 160
120 to 240
200 to 400
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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