参数资料
型号: 2SB1580T100
元件分类: 小信号晶体管
英文描述: 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封装: MPT3, SC-62, 3 PIN
文件页数: 1/3页
文件大小: 76K
代理商: 2SB1580T100
2SB1580 / 2SB1316
Transistors
Rev.A
1/2
Power Transistor (
100V , 2A)
2SB1580 / 2SB1316
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SD2195 / 2SD1980.
Absolute maximum ratings (Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
8
2
1
150
55 to +150
Unit
V
A(DC)
3
1
A(Pulse)
W
10
2
W(Tc
=25°C)
2SB1580
2SB1316
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
°C
1 Single pulse Pw=100ms
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Packaging specifications and hFE
Type
2SB1580
MPT3
1k to 10k
T100
1000
BN
2SB1316
CPT3
1k to 10k
TL
2500
Denotes hFE
Package
hFE
Code
Basic ordering unit (pieces)
Marking
Equivalent circuit
R1 3.5k
R2 300
B
C
E
C
B
E
: Base
: Collector
: Emitter
R1
R2
External dimensions (Unit : mm)
2SB1316
2SB1580
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
(3) Emitter
(2) Collector
(1) Base
ROHM : CPT3
EIAJ : SC-63
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
Electrical characteristics (Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
ICBO
IEBO
Cob
100
35
10
3
V
A
mA
pF
MHz
IC
= 50A
IC
= 5mA
VCB
= 100V
VEB
= 7V
VCE(sat)
1.5
V
IC/IB
= 1A/1mA
hFE
1000
10000
VCE
= 2V , IC = 1A
VCB
= 10V , IE = 0A , f = 1MHz
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVEBO
10
V
IE
= 5mA
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Output capacitance
Collector-emitter saturation voltage
DC current transfer ratio
fT
50
VCE
= 5V , IE =0.1A , f = 30MHz
Transition frequency
Measured using pulse current.
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