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参数资料
| 型号： | 2SB1642 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 4 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 封装： | SC-67, 3 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 124K |
| 代理商： | 2SB1642 |
2SB1642
2004-07-26
1
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1642
Audio Frequency Power Amplifier Applications
Low collector saturation voltage: VCE (sat) = 1.5 V (max)
(IC = 2.5 A, IB = 0.25 A)
Collector power dissipation: PC = 25 W (Tc = 25°C)
Collector metal (fin) is fully covered with mold resin.
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
4
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 60 V, IE = 0
―
10
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
10
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
60
―
V
hFE (1)
VCE = 5 V, IC = 0.5 A
100
―
320
DC current gain
hFE (2)
VCE = 5 V, IC = 3 A
20
―
Collector-emitter saturation voltage
VCE (sat)
IC = 2.5 A, IB = 0.25 A
―
0.7
1.5
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 0.5 A
―
0.75
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 0.5 A
―
9
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
50
―
pF
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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