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参数资料
| 型号： | 2SB1599P |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | SC-62, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 49K |
| 代理商： | 2SB1599P |
1
Transistor
2SB1599
Silicon PNP epitaxial planer type
For power amplification
Complementary to 2SD2457
s Features
q
Low collector to emitter saturation voltage VCE(sat).
q
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC–62
3:Emitter
Mini Power Type Package
4.5
±0.1
2.6
±0.1
2.5
±0.1
0.4max.
1.0
+0.1
–0.2
4.0
+0.25
–0.20
3.0
±0.15
1.5
±0.1
0.4
±0.08
0.5
±0.08
1.5
±0.1
0.4
±0.04
1.6
±0.2
45
°
marking
321
Symbol
VCBO
VCEO
VEBO
ICP
IB
PC
*
Tj
Tstg
Ratings
–50
–40
–5
–3
– 0.6
1
150
–55 ~ +150
Unit
V
A
W
C
s Electrical Characteristics (Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
ICEO
IEBO
VCBO
VCEO
hFE
*
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
VCE = –12V, IB = 0
VEB = –5V, IC = 0
IC = –1mA, IE = 0
IC = –10mA, IB = 0
VCE = –5V, IC = –1A
IC = –1.5A, IB = –0.15A
IC = –2A, IB = –0.2A
VCB = –5V, IE = 0.5A, f = 200MHz
VCB = –5V, IE = 0, f = 1MHz
min
–50
–40
50
typ
– 0.4
150
70
max
–1
–100
220
–1
–1.5
Unit
A
V
MHz
pF
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
Marking symbol :
1X
*h
FE Rank classification
Rank
P
Q
R
hFE
50 ~ 100
80 ~ 160
100 ~ 220
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