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参数资料
| 型号： | 2SC3336 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 37K |
| 代理商： | 2SC3336 |
2SC3336
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
500
V
Collector to emitter voltage
V
CEO
400
V
Emitter to base voltage
V
EBO
10
V
Collector current
I
C
15
A
Collector peak current
I
C(peak)
25
A
Base current
I
B
7.5
A
Collector power dissipation
P
C*
1
100
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter sustain
V
CEO(sus)
400
—
V
I
C = 0.2 A, RBE = ∞, L = 100 mH
voltage
V
CEX(sus)
400
—
V
I
C = 15 A, IB1 = 3.0 A, IB2 = –1 A
V
BE = –5.0 V, L = 180 H,
Clamped
Emitter to base breakdown
voltage
V
(BR)EBO
10
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CBO
——
50
AV
CB = 400 V, IE = 0
I
CEO
——
50
AV
CE = 350 V, RBE = ∞
DC current transfer ratio
h
FE1
12
—
V
CE = 5.0 V, IC = 7.5 A*
1
h
FE2
5—
—
V
CE = 5.0 V, IC = 15 A*
1
Collector to emitter saturation
voltage
V
CE(sat)
—
1.0
V
I
C = 7.5 A, IB = 1.5 A*
1
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
Turn on time
t
on
—
0.5
sI
C = 15 A, IB1 = –IB2 = 3.0 A
Storage time
t
stg
—
1.5
sV
CC = 150 V
Fall time
t
f
—
0.3
0.5
s
Note:
1. Pulse test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3336(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3337 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 20V .1A .4W BEC |
| 2SC3338 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC3339 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236 |
| 2SC3340 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
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