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参数资料
| 型号： | 2SC3336 |
| 元件分类： | 功率晶体管 |
| 英文描述： | 15 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3P, 3 PIN |
| 文件页数： | 4/8页 |
| 文件大小： | 37K |
| 代理商： | 2SC3336 |
2SC3336
4
Reverse Bias Area of Safe Operation
25
20
15
10
5
0
100
IB2 = –1 A
300 V
25 A
400 V
15 A
450 V
3.5 A
200
300
400
500
Collector
current
I
C
(A)
Collector to emitter voltage VCE (V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
IC = 1 mA
500
400
300
100
1 k
Base to emitter resistance RBE ()
10 k
100 k
1 M
Collector
to
emitter
voltage
V
CER
(V)
Typical Output Characteristecs
TC = 25°C
IB = 0
0.1 A
1.0
0.8
0.6
0.2
0.4
10
8
6
4
2
01
2
Collector to emitter voltage VCE (V)
5
4
3
Collector
current
I
C
(A)
TC = 25°C
VCE = 5 V
10
8
6
4
2
0
0.4
0.8
Base to emitter voltage VBE (V)
1.2
1.6
2.0
Collector
current
I
C
(A)
Typical Transfer Characteristics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3336(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC3337 | 制造商:Distributed By MCM 功能描述:SUB ONLY HITACHI TRANSISTORTO-92 20V .1A .4W BEC |
| 2SC3338 | 制造商:HITACHI 制造商全称:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC3339 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-236 |
| 2SC3340 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
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