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参数资料
| 型号： | 2SC3647-R |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | PCP, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 45K |
| 代理商： | 2SC3647-R |
PS No.2006-4/4
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the author ities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
2SA1417/2SC3647
ITR03554
VBE(sat) -- IC
--1.0
--3
--10
--5
--7
--5
--7
--3
--2
0.01
3
0.1
5
7
5
2
3
1.0
5
7
2
3
2
--7--0.01
--0.1
--5 --7
--3
--2
--1.0
--5 --7
--3
--2
--3
--2
1.0
3
10
5
7
5
7
3
2
7 0.01
0.1
57
3
2
1.0
57
3
23
2
7
1.0
53
22
0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
0
20
80
100
60
40
160
140
120
ITR03555
VBE(sat) -- IC
ITR03556
A S O
Infinite
heat
sink
7
10
53
27 100
5
PC -- Ta
ITR03557
2SA1417 / 2SC3647
ICP=3A
IC=2A
1ms
10
ms
100
ms
DC
operation
For PNP, minus sign is omitted.
Single Pulse
Ta=25
°C
Mounted on ceramic board(250mm2
×0.8mm)
25
°C
Ta=--25
°C
75
°C
2SC3647
IC / IB=10
2SA1417
IC / IB=10
25
°C
Ta=--25
°C
75
°C
Collector Current, IC – A
Collector Current, IC –A
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Base-to-Emitter
Saturation
Voltage,
V
BE
(sat)
–
V
Collector-to-Emitter Voltage, VCE –V
Collector
Current,
I C
–A
Collector
Dissipation,
P
C
–W
Ambient Temperature, Ta – C
Mounted
on
ceramic
board(250mm
2
×
0.8mm)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC3647-T | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1417-R | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1417-R | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3647G-S-AB3-R | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC3647L-R-AB3-R | 2000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3647S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3647T-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 2A 100V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3648S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3648T-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 0.7A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3649S-TD-E | 功能描述:两极晶体管 - BJT BIP NPN 1.5A 160V RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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