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参数资料
| 型号： | 2SC3835 |
| 厂商： | UNISONIC TECHNOLOGIES CO LTD |
| 元件分类： | 功率晶体管 |
| 英文描述： | 7 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-3PN, 3 PIN |
| 文件页数： | 4/4页 |
| 文件大小： | 120K |
| 代理商： | 2SC3835 |
UTC2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD
4
QW-R214-002,A
0.05
0.1
0.5
1
5
10
20
5
200
10
50
120
Safe Operating Area (Single Pulse)
Co
lle
ct
or
Cu
rre
nt
,I
c(A
)
100
ms
Without Healstink
Natural Cooling
10
m
s
Collector-Emitter Current, VcE (A)
Ma
xi
mu
m
P
owe
rD
issi
pa
tio
n,
P
c(
W
)
0
3.5
20
30
40
50
0
25
50
75
100
125
150
10
Pc–Ta Derating
Ambient Temperature Ta (℃)
W
ith
Infi
nite
He
ats
ink
Without Heatsink
60
70
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC3837KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SC3837KT146N | 功能描述:两极晶体管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3837KT146N/P | 制造商:ROHM Semiconductor 功能描述:Transistor, NPN, RF, 18V, 50mA, SMT3, 2 |
| 2SC3837KT146P | 功能描述:两极晶体管 - BJT NPN 20V 50MA RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC3838KT146 | 制造商:ROHM Semiconductor 功能描述: |
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