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参数资料
| 型号： | 2SC4627J-C |
| 厂商： | PANASONIC CORP |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 15 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封装： | ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 165K |
| 代理商： | 2SC4627J-C |
1
Transistors
Publication date: June 2007
SJC00163CED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627J
Silicon NPN epitaxial planar type
For high-frequency amplification
■ Features
Optimum for RF amplification of FM/AM radios
High transition frequency f
T
SS-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
30
V
Collector-emitter voltage (Base open)
VCEO
20
V
Emitter-base voltage (Collector open)
VEBO
3V
Collector current
IC
15
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 030
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 03
V
Base-emitter voltage
VBE
VCB = 6 V, IE = 1 mA
720
mV
Forward current transfer ratio *
hFE
VCB
= 6 V, I
E
= 1 mA
65
160
Transition frequency
fT
VCB = 6 V, IE = 1 mA, f = 200 MHz
450
650
MHz
Reverse transfer capacitance
Cre
VCB = 6 V, IE = 1 mA, f = 10.7 MHz
0.8
1.0
pF
(Common emitter)
Power gain
PG
VCB = 6 V, IE = 1 mA, f = 100 MHz
24
dB
Noise figure
NF
VCB
= 6 V, I
E
= 1 mA, f = 100 MHz
3.3
dB
Unit: mm
■ Electrical Characteristics T
a
= 25°C ± 3°C
Rank
C
hFE
65 to 160
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.27±0.02
3
12
0.12
+0.03
–0.01
0.80
±
0.05
(0.80)
0.85
1.60
±
0.05
0
to
0.02
0.10
max.
0.70
+0.05 –0.03
(0.375)
5
1.60
+0.05
–0.03
1.00±0.05
(0.50)(0.50)
+0.05 –0.03
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Marking Symbol: U
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相关代理商/技术参数 |
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