参数资料
型号: 2SC4656R
厂商: PANASONIC CORP
元件分类: 小信号晶体管
英文描述: 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封装: SSMINI3-G1, SC-75, 3 PIN
文件页数: 1/3页
文件大小: 197K
代理商: 2SC4656R
Transistors
1
Publication date: February 2003
SJC00165BED
2SC4656
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1791
■ Features
Small collector output capacitance (Common base, input open cir-
cuited) Cob
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
5V
Collector current
IC
50
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
55 to +125
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
VCBO
IC
= 10 A, I
E
= 050
V
Collector-emitter voltage (Base open)
VCEO
IC = 1 mA, IB = 050
V
Emitter-base voltage (Collector open)
VEBO
IE = 10 A, IC = 05
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 10 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
ICEO
VCE = 10 V, IB = 0
100
A
Forward current transfer ratio *
hFE
VCE = 10 V, IC = 2 mA
200
500
Collector-emitter saturation voltage
VCE(sat)
IC
= 10 mA, I
B
= 1 mA
0.06
0.30
V
Transition frequency
fT
VCB = 10 V, IE = 2 mA, f = 200 MHz
250
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
1.5
pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
200 to 400
250 to 500
Marking Symbol: AM
1.6
±
0.15
1.6±0.1
5
1
1.0±0.1
0.75
±
0.15
0.45
±
0.1
0
to
0.1
(0.5)
(0.3)
(0.5)
0.8
±
0.1
(0.4)
0.15
+0.1
–0.05
0.2
+0.1
–0.05
1
2
3
0.2
±
0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相关PDF资料
PDF描述
2SC4656Q 50 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC4710LS 0.01 A, 2100 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC4809Q Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC4809P Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5011-T2EB UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
2SC4662LF608 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC4662LF654 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SC4663-4000 功能描述:两极晶体管 - BJT VCEO=200 IC=5 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4664-4000 功能描述:两极晶体管 - BJT VCEO=200 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
2SC4664-7000 功能描述:两极晶体管 - BJT VCEO=200 IC=8 HFE=10 RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2