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参数资料
| 型号： | 2SC5012 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件页数： | 1/21页 |
| 文件大小： | 534K |
| 代理商： | 2SC5012 |
PLEASE
NOTE:
PLEASE
NOTE:
PLEASE
NOTE:
PLEASE
NOTE:
PLEASE
NOTE:
The
following
part
numbers
The
following
part
numbers
The
following
part
numbers
The
following
part
numbers
The
following
part
numbers
from
this
datasheet
are
not
from
this
datasheet
are
not
from
this
datasheet
are
not
from
this
datasheet
are
not
from
this
datasheet
are
not
recommended
for
new
design.
recommended
for
new
design.
recommended
for
new
design.
recommended
for
new
design.
recommended
for
new
design.
Please
call
sales
office
for
Please
call
sales
office
for
Please
call
sales
office
for
Please
call
sales
office
for
Please
call
sales
office
for
details:
NE68135
NE68139R
0.5
1.0
2.0
3.0
1.0
2.0
3.0
0
10
20
MSG
GA
NF
VCE = 3 V, IC = 5 mA
MAG
NEC's NPN SILICON HIGH
FREQUENCY TRANSISTOR
SILICON TRANSISTOR
NE681 SERIES
FEATURES
HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
LOW NOISE FIGURE:
1.2 dB at 1 GHz
1.6 dB at 2 GHz
HIGH ASSOCIATED GAIN:
15 dB at 1 GHz
12 dB at 2 GHz
LOW COST
00 (CHIP)
35 (MICRO-X)
Frequency, f (GHz)
Associated
Gain,
Maximum
Stable
Gain
and
Maximum
Available
Gain,
GA,
MSG,
MAG
(dB)
Minimum
Noise
Figure,
NF
min
(dB)
18 (SOT 343 STYLE)
19 (3 PIN ULTRA
SUPER MINI MOLD)
39 (SOT 143 STYLE)
39R (SOT 143R STYLE)
33 (SOT 23 STYLE)
DESCRIPTION
NEC's NE681 series of NPN epitaxial silicon transistors are
designed for low noise, high gain, low cost amplifier applica-
tions. Both the chip and micro-x versions are suitable for
amplifier applications up to 4 GHz. The NE681 die is also
available in six different low cost plastic surface mount pack-
age styles. NE681's unique device characteristics allow you to
use a single matching point to simultaneously achieve both low
noise and high gain.
E
B
NOISE FIGURE, GAIN MSG
AND MAG vs. FREQUENCY
30 (SOT 323 STYLE)
Date Published: June 28, 2005
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC4094 | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC3583 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011-FB-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011-EB-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5011-FB-A | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5012(NE68118) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5012-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:剪带 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:- 标准包装:1 |
| 2SC5012-FB(T1) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5012-T1 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5012-T1-A | 功能描述:RF TRANSISTOR NPN SOT-343 制造商:cel 系列:- 包装:带卷（TR） 零件状态:有效 晶体管类型:NPN 电压 - 集射极击穿（最大值）:10V 频率 - 跃迁:9GHz 噪声系数（dB，不同 f 时的典型值）:1.2dB @ 1GHz 增益:15dB 功率 - 最大值:150mW 不同?Ic，Vce?时的 DC 电流增益（hFE）（最小值）:50 @ 20mA，8V 电流 - 集电极（Ic）（最大值）:65mA 安装类型:表面贴装 封装/外壳:SC-82A，SOT-343 供应商器件封装:SOT-343 标准包装:3,000 |
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