参数资料
型号: 2SC5015-T1-KB
元件分类: 小信号晶体管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封装: SUPER MINIMOLD PACKAGE-4
文件页数: 6/10页
文件大小: 176K
代理商: 2SC5015-T1-KB
Data Sheet PU10403EJ01V0DS
3
2SC5015
TYPICAL CHARACTERISTICS (TA = +25
°°°°C, unless otherwise specified)
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
30
15
10
25
20
5
02
6
48
IB = 20 A
80 A
60 A
40 A
100 A
120 A
140 A
160 A
180 A
200 A
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2
1
0.5
0.2
0.1
15
10
220
VCE = 3 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.6
0.5
0.4
0.7
0.8
1.0
0.9
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