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参数资料
| 型号： | 2SC5015-T1-KB |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | SUPER MINIMOLD PACKAGE-4 |
| 文件页数： | 7/10页 |
| 文件大小： | 176K |
| 代理商： | 2SC5015-T1-KB |
Data Sheet PU10403EJ01V0DS
4
2SC5015
VCE = 3 V
IC = 10 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
50
40
30
20
0
10
0.1
0.2
0.5
1
2
5
MAG
|S21e|
2
VCE = 3 V
f = 2 GHz
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Insertion
Power
Gain
|S
21e
|2
(dB)
12
10
6
8
0
2
4
1
5
10
20
250
VCE = 3 V
f = 2 GHz
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
0
2
4
6
8
10
12
2
5
10
20
150
1 000
100
10
1
0.1
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
1 000
100
10
1
0.1
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
1 000
100
10
1
0.1
10
100
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5015-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5022 | 0.02 A, 1500 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC5023C | Si, NPN, RF POWER TRANSISTOR |
| 2SC5024B | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC5024B | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5015-T2 | 制造商:NEC 制造商全称:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5016 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5018 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
| 2SC5018ZD-02TL | 制造商:HITACHI 功能描述: |
| 2SC5019 | 制造商:PANASONIC 制造商全称:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
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