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参数资料
| 型号： | 2SC5193-T1FB-A |
| 元件分类： | 小信号晶体管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MINIMOLD PACKAGE-3 |
| 文件页数： | 6/12页 |
| 文件大小： | 55K |
| 代理商： | 2SC5193-T1FB-A |
3
2SC5193
TYPICAL CHARACTERISTICS (TA = 25
C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature TA (
°C)
Free Air
50
100
150
0
100
200
Total
Power
Dissipation
P
T
(mW)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Base to Emitter Voltage VBE (V)
VCE = 1 V
0.5
1
0
0.01
0.02
0.05
0.1
0.2
0.5
100
50
20
10
5
2
1
Collector
Current
I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage VCE (V)
200 A
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
12
3
4
56
0
30
20
10
Collector
Current
I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current IC (mA)
VCE = 1 V
1
2
5
10 20
50 100
0.1 0.2
0.5
0
100
200
DC
Current
Gain
h
FE
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current IC (mA)
f = 2 GHz
VCE = 1 V
12
3
5
7
10
0
5
10
Gain
Bandwidth
Product
f
T
(GHz)
INSERTION GAIN vs.
COLLECTOR CURRENT
Collector Current IC (mA)
f = 2 GHz
VCE = 1 V
12
3
5
7
10
0
5
10
Insertion
Power
Gain
|S
21e
|
2 (dB)
相关PDF资料 |
PDF描述 |
|---|---|
| 2SC5193-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-T2FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5193-FB | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5200-R | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
| 2SC5200-O | 15 A, 230 V, NPN, Si, POWER TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5193-T2 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD |
| 2SC5194 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194(NE68818) | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Discrete |
| 2SC5194F-T2 | 制造商:NEC 制造商全称:NEC 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-343R |
| 2SC5194-T1 | 制造商:NEC 制造商全称:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
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