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参数资料
| 型号： | 2SC5226-4 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封装： | MCP, 3 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 74K |
| 代理商： | 2SC5226-4 |
2SK2568
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
0.5
0.6
I
D = 6 A
V
GS = 10 V*
1
Forward transfer admittance
|y
fs|
6.0
10
—
S
I
D = 6 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
1560
—
pF
V
DS = 10 V
Output capacitance
Coss
—
450
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
72
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
22
—
ns
I
D = 6 A
Rise time
t
r
—
78
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
140
—
ns
R
L = 5
Fall time
t
f
—60—ns
Body to drain diode forward
voltage
V
DF
—
1.1
—
V
I
F = 12 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
105
—
ns
I
F = 12 A, VGS = 0
diF / dt = 100 A / s
Note:
1. Pulse Test
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相关代理商/技术参数 |
参数描述 |
|---|---|
| 2SC5226-5 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 70MA I(C) | SOT-323 |
| 2SC5226A | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifier Applications |
| 2SC5226A_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:VHF to UHF Wide-Band Low-Noise Amplifi er Applications |
| 2SC5226A-4-TL-E | 功能描述:两极晶体管 - BJT VHF TO UHF WIDEBAND AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| 2SC5226A-5-TL-E | 功能描述:两极晶体管 - BJT VHF TO UHF WIDEBAND AMPLIFIER RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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