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参数资料
| 型号： | 2SC5532B |
| 元件分类： | 功率晶体管 |
| 英文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封装： | TO-220FN, 3 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 46K |
| 代理商： | 2SC5532B |
2SC5532
Transistors
High-voltage Switching Transistor
(400V, 5A)
2SC5532
!
!Features
1) Low VCE(sat). (Typ. 0.6V at IC / IB = 5/1A)
2) High switching speed. (tf : Max. 1
s at Ic =4A)
3) Wide SOA (safe operating area).
!
!Absolute maximum ratings
(Ta = 25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
PC
Tj
Tstg
Limits
400
7
30
150
-55~+150
Unit
V
A
*
°C
IC
5A
W (Tc = 25
°C)
* Single pulse, Pw = 100ms.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector power dissipation
Junction temperature
Storage temperature
Collector current
!
!Packaging specifications and hFE
Type
2SC5532
TO-220FN
AB
-
500
Package
hFE
Code
Basic ordering unit (pieces)
!
!Electrical characteristics
(Ta = 25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VBE(sat)
hFE
fT
Cob
ton
tstg
400
7
-
15
80
-
10
1.5
50
-
V
A
V
-
MHz
pF
IC = 50
A
IC = 1mA
IE = 50
A
VCB = 400V
VEB = 5V
IC/IB = 5A/1A
VCE(sat)
--
1
V
IC/IB = 5A/1A
VCE/IC = 5V/2A
VCB = 10V , IE =
0.5A , f = 5MHz
*
VCB = 10V , IE = 0A , f = 1MHz
--
1
s
IC = 4A , RL = 50
-
2.5
s
IB1 =
IB2 = 0.4A
tf
--
1
s
VCC
200V
16
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
* Measured using pulse current.
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